Patents

An organic/inorganic F8T2/gallium nitride (GaN) hybrid light-emitting device is fabricated and found to emit white light. The white light emission is determined to be the combination of the blue emission of the GaN light-emitting diode and the yellow emission of the F8T2 layer. Analysis of the results of this work reveals the following: 1) the yellow emission of the F8T2 layer in the F8T2/GaN light-emitting device is caused by both electroluminescence and photoluminescence and 2) the origin of the majority of the yellow emission is the electroluminescence mechanism. A potential barrier in the valence band at the F8T2/p-GaN interface has been observed and determined to be 1.05 eV by ultraviolet photoelectron spectroscopy analysis.